UNPASSIVATED HIGH OPERATING TEMPERATURE GaInAsSb INFRARED PHOTODETECTOR GROWN ON GaAs SUBSTRATE

Authors : Uğur SERİNCAN, Mehmet ERKUŞ, Onur ŞENEL

Pages : 624-631

Doi:10.18038/aubtda.318136

View : 13 | Download : 9

Publication Date : 2017-09-30

Article Type : Research Paper

Abstract :Ga 0.87 In 0.13 As 0.4 Sb 0.96 photodiode structure was grown on semi-insulating 4” GaAs substrate by molecular beam epitaxy. The composition, crystal quality and dislocation density of epilayers were determined by high resolution X-ray diffraction rocking curve measurements. The threading dislocation density of the photodetector structure was calculated from the rotational broadening as ~2.5x10 8 cm -2 . The cutoff wavelength and the peak responsivity of the photodetector were determined as around 2.15 μm and 0.08 A/W at 300 K, respectively. By applying reverse bias insert ignore into journalissuearticles values(-100 mV); the responsivity value of the photodetector increases more than an order insert ignore into journalissuearticles values(~0.96 A/W); which is the best value reported up to now. Those results indicate that although there is a large lattice mismatch insert ignore into journalissuearticles values(~8.4%); between GaAs substrate and the photodetector structure, an acceptable photodetector performance was achieved which is important for reducing photodetector costs.
Keywords : MBE, GaInAsSb, HRXRD, Photodetector