FABRICATION of n-ZnO:Mn/p-Si HETEROJUNCTION DIODES and ITS I-V, C-V CHARACTERISTICS

Authors : Seval AKSOY

Pages : 296-306

Doi:10.18038/estubtda.506606

View : 16 | Download : 8

Publication Date : 2019-09-26

Article Type : Research Paper

Abstract :To investigate the effects of Mn dopant on n-ZnO/p-Si device performance, ZnO films were produced in different Mn dopant by the sol gel spin coating method. Morphological properties of the films were studied by emission scanning electron microscopy insert ignore into journalissuearticles values(FESEM);. Then, the n-ZnO:Mn/p-Si heterojunction diodes were fabricated. The diode parameters were determined by current-voltage insert ignore into journalissuearticles values(I-V); measurements. The  values of the diodes were found to be 8.38, 6.84 and 3.87, respectively, for the diodes produced using undoped, 1% Mn doped and 3% Mn doped ZnO films. At the same time, electrical parameters were determined to compare by using Cheung and Norde methods. According to the evaluation of  values obtained by different methods, an improvement on the rectifying properties of the ZnO diode with Mn dopant has been observed. In the continuation of the study, the photovoltaic properties of the heterojunction diodes have been studied. The results obtained at different illumination intensities showed that the diodes are sensitive to light. Capacitance-voltage insert ignore into journalissuearticles values(C-V); measurements of the fabricated diodes are also investigated in detail.
Keywords : Mn doped ZnO, Sol gel, Heterojunction diode, FESEM, Electrical parameters