Analysis of Barrier Height and Carrier Concentration of MOS Capacitor Using C-f and G/ω-f Measurements

Authors : Adem TATAROĞLU, G. GÜVEN, S. YILMAZ, A. BÜYÜKBAŞ

Pages : 909-915

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Publication Date : 2014-04-04

Article Type : Research Paper

Abstract :Capacitance insert ignore into journalissuearticles values( C); and conductance insert ignore into journalissuearticles values(G/ω); measurements of metal-oxide-semiconductor insert ignore into journalissuearticles values(MOS); capacitors with Si3N4 dielectric deposited on Si were investigated in the frequency range of 1 kHz to 1 MHz at room temperature. The values of measured C and G/ω of MOS capacitor decrease with the increasing frequency . The 1/C2-V curves are linear in the wide voltage region for each frequency . This linearity of the curves is attributed to the uniformity of the donor concentration in the depletion region. Also, the barrier height insert ignore into journalissuearticles values( F B ); and carrier insert ignore into journalissuearticles values(donor); concentration insert ignore into journalissuearticles values( ND); were obtained from C-2-V characteristics. The values of the Φ B and ND decrease with the increasing frequency.
Keywords : MOS capacitor, C f and G ω f characteristics, Barrier height, Donor concentration