The Dependence of The Nickel Concentration of ZnO Thin Films for Gas Sensors Applications

Authors : Baktiyar SOLTABAYEV, İrmak KARADUMAN ER, Memet Ali YILDIRIM, Aytunç ATEŞ, Selim ACAR

Pages : 157-165

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Publication Date : 2021-03-29

Article Type : Research Paper

Abstract :Undoped ZnO and Ni-doped ZnO thin films were synthesized on glass substrate using the SILAR method. The aim of this work is the analysis of NO gases using Zn1-xNixO sensors concentrations in the range from 100 ppb to 25 ppm. The gas sensing properties of the films for low NO gas concentrations were carefully investigated within a temperature range from 35 to 135ºC. The gas measurement results revealed that the doping process was strongly affected by the response of Ni-doped ZnO thin films. The Zn0.75Ni0.25O sensor exhibited higher sensitivity, faster response, and recovery times for NO gas at low insert ignore into journalissuearticles values(100 ppb); concentration. It was concluded that the Ni dopant enhanced the properties of ZnO films for gas sensor applications by changing the microstructure, morphology, and bandgap of ZnO material.
Keywords : Gas Sensor, ZnO, Low Temperature Range, NO, SILAR Method