Effect of Post-Annealing Treatment on the Structural, Optical, and Electrical Properties of V2O5 Thin Films

Authors : Semih INCECAM, Adem SARAÇ, Evren ERDİL, Ali ÇAĞIRTEKİN, Selim ACAR

Pages : 299-307

View : 14 | Download : 5

Publication Date : 2021-06-28

Article Type : Research Paper

Abstract :Vanadium pentoxide insert ignore into journalissuearticles values(V2O5); thin films were prepared on microscope glass slides using the reactive DC magnetron sputtering technique at room temperature. Post annealing process was performed at atmospheric conditions in 480°C for 1 hour. To investigate the effect of post-annealing treatment, morphological and structural analyses were carried out by field emission scanning electron microscopy insert ignore into journalissuearticles values(FESEM); and X-ray diffraction insert ignore into journalissuearticles values(XRD);, respectively. Additionally optical characterization was completed using UV-Vis spectrophotometer. Current-voltage insert ignore into journalissuearticles values(I-V); and capacitance-voltage insert ignore into journalissuearticles values(C-V); measurements were performed to examine electrical properties. XRD revealed the drastic effect of post-annealing on the crystallization of amorphous V2O5 thin films. The amorphous as-deposited film structure transformed into the polycrystalline form after post-annealing treatment. FESEM images revealed a remarkable change in surface morphology from a smooth flat surface to a rough surface with the formation of V2O5 nanorods under the influence of post-annealing. Optical energy band gap was observed to decrease drastically. The significant changes in the structure and morphology of the thin films with post-annealing affected their electrical properties to a fair extent. While resistance increased, capacitance and dielectric permittivity of the films decreased with post-annealing treatment.
Keywords : Amorphous V2O5, Post Annealing, DC Magnetron Sputtering, Thin Films, Characterization