Thermodynamic Bases for Obtaining Crystalline Perfect Silicon from Tin-silicon Solution

Authors : Alijon RAZZOKOV, Khushnudbek ESHCHANOV

Pages : 1-6

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Publication Date : 2022-06-01

Article Type : Research Paper

Abstract :Silicon epitaxial layers were grown on a silicon insert ignore into journalissuearticles values(Si ); substrate in the range of 1323÷1073 K with initial crystallization temperatures from the silicon-tin insert ignore into journalissuearticles values(Si-Sn); solution. To determine the forces acting between the silicon nanoclusters in solution and the tin insert ignore into journalissuearticles values(Sn); particles and the silicon insert ignore into journalissuearticles values(Si); surface, the dielectric constant values of silicon, tin at selected temperatures were found experimentally. Given the Gibbs energy of the system to obtain the perfect epitaxial layers and structures of the crystal, optimal technological growth conditions are given.
Keywords : epitaxy, nanocluster, crystallization, solution melt, dislocation, dielectric constant