Semiconducting properties of In3Te4 crystals: An experimental study

Authors : Gadelkarim Ata GAMAL, Mohamed Ali ABOUZIED, Mohamud Fouad SANAA

Pages : 31-38

Doi:10.3906/kim-1303-28

View : 19 | Download : 9

Publication Date : 0000-00-00

Article Type : Research Paper

Abstract :IndiumTelluride In3Te4 crystal was characterized for electrical conductivity, Hall mobility, carrier concentration, and thermoelectric power insert ignore into journalissuearticles values(TEP); as a function of temperature in the range 202--526 K this was done with the aid of liquid nitrogen which enabled us to detect the intrinsic behavior. The crystals were prepared by a modified vertical Bridgman technique. Throughout these measurements various physical parameters, such as effective mass of charge carriers, carrier mobility, diffusion coefficient, and relaxation time for both majority and minority carriers were found.
Keywords : In3Te4, crystal growth, semiconductors, thermoelectric power, electrical conductivity Hall effect