Effect of nitrogen incorporation on the electronic and optical properties of AlGaAsN/GaAs quantum well lasers

Authors : Boualem MERABET, Abdelhadi Lachebi And Hamza ABID

Pages : 13-22

Doi:10.3906/yer-1302-13

View : 15 | Download : 4

Publication Date : 0000-00-00

Article Type : Research Paper

Abstract :In order to investigate the profound effect of small amounts of nitrogen incorporated into the III-V systems on the fundamental band gap, which decreases dramatically with increasing of N+ implantation, we present a pseudopotential formalism within the Virtual Crystal Approximation confronted to the Band Anti-crossing model, which parameterizes successfully such behaviour, so as to study the electronic and optical properties of dilute AlxGa1-xAs1-yNy materials, prepared by implantation of N+ into epitaxial AlGaAs. Analytical formulas of quantized energy levels in AlGaAsN quantum well insert ignore into journalissuearticles values(QW); lasers and optical transition wavelengths between subbands are presented and compared to simulations based on our programs.
Keywords : III N V, AlGaAsN, EPM, BAC, QW lasers, energy levels