Characterization of In4Te3 Single crystals

Authors : M. DONGOL, M. M. NASSARY, M. K. GERGES, M. A. SEBAG

Pages : 211-218

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Publication Date : 0000-00-00

Article Type : Research Paper

Abstract :Single crystals of In4Te3 grown by modified Bridgman technique were characterized by measurement of the Hall coefficient, electrical conductivity and Seebeck coefficient, in the temperature range 200-500 K. The investigated sample was found to be of P-type conductivity.RH at room temperature was 3.1 \times 1014 cm3/coul and the carrier concentration was evaluated as 2.007 \times 1014 cm3. Energy gap D Eg and ionization energy D Ea were estimated as 0.28 eV and 0.12 eV, respectively, and the diffusion coefficient, the diffusion length, the mean free time between collision and the effective mass of carriers were evaluated. The variation of the Hall mobility with temperature was studied and hence the scattering mechanism is discussed.
Keywords : In4Te3, Hall and Seebeck coefficients, Electrical conductivity