Effects of Substrate Temperature on Properties of a-SiNx:H Films

Authors : Tayyar Güngör And Hüseyin TOLUNAY

Pages : 269-276

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Publication Date : 0000-00-00

Article Type : Research Paper

Abstract :Hydrogenated amorphous silicon nitride films were prepared in an rf glow-discharge system by the decomposition of silane + nitrogen gas mixture at various substrate temperatures. The effects of substrate temperature on the electrical and optical properties of the films have been studied.
Keywords : A Hydrogenated amorphous silicon nitride, B Substrate temperature, C Dark conductivity, D Photoconductivity, E Optical gap