Vacuum Cryostat`s Pressure Dependent Dark Conductivity Measurements on a-Si:H and a-SiN:H Films

Authors : İlker AY, Hüseyin TOLUNAY

Pages : 265-270

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Publication Date : 0000-00-00

Article Type : Research Paper

Abstract :The electrical properties of a-Si:insert ignore into journalissuearticles values( H ); and a- SiN );:insert ignore into journalissuearticles values( H ); films prepared by plasma deposition from SiH4+NH3 gas mixtures have been investigated. We observed anomalous peaks in the temperature dependent dark conductivity curves of annealed a-Si:H and a-SiN:H samples when the temperatures were increased from 90 K to room temperature at a constant heating rate. To study the surface adsorption effect, vacuum cryostat pressure dependence of these peaks are investigated. We have also studied the effect of nitrogen on these observed peaks in dark conductivity.
Keywords : A Dark conductivity, B Cryostat pressure, C Surface effect