Energy Relaxation Rate of Hot Electrons in N-Type GaN Epilayers using Heat Pulse Techniques

Authors : P. HAWKER, A. J. KENT, T. S. CHENG, C. T. FOXON

Pages : 611-618

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Publication Date : 0000-00-00

Article Type : Research Paper

Abstract :We have measured the energy relaxation rate of hot electrons in MBE grown bulk GaN epilayers on GaAs and sapphire substrates over the electron temperature range 1 - 130 K. The measurements were made using heat pulse techniques. For layers grown on GaAs substrates the results show that the carriers reside in the substrate, probably as in a GaAs/AlGaAs heterojunction. For layers grown on sapphire substrates we obtain a P \propto T4e dependence for the relaxation rate in the low temperature limit, consistent with piezoelectric coupling in the so-called `dirty` regime, changing to a linear dependence in the high temperature, equipartition, regime.
Keywords : Turk J Phys, 23, 1999, , 611 618 Turk J Phys, vol 23, iss 4