An Investigation of Electrical Properties of Porous Silicon

Authors : G. ALGÜN, M. Ç. ARIKAN

Pages : 789-798

View : 8 | Download : 3

Publication Date : 0000-00-00

Article Type : Research Paper

Abstract :In this work, electrical properties of porous silicon structures, formed with electrochemical anodization in HF acid solution under two different current densities, were investigated. In these experiments, Sb doped insert ignore into journalissuearticles values(111);-oriented n-type silicon samples with 0.006-0.015 W cm resistivity was used. Samples were anodized in a solution of 38% HF and 99% C2H2OH at 1:1 ratio for 15 minutes. After anodization, the structures that formed at low current density insert ignore into journalissuearticles values(J = 5 mA/cm2); was compared with structures that formed at high current density insert ignore into journalissuearticles values(J = 30 mA/cm2);. Both structures and electrical properties were investigated.
Keywords : Turk J Phys, 23, 1999, , 789 798 Turk J Phys, vol 23, iss 4