Light Emission From Travelling Space Charge Domains

Authors : M. HOSTUT

Pages : 799-804

View : 9 | Download : 7

Publication Date : 0000-00-00

Article Type : Research Paper

Abstract :We report light emission from n-doped GaAs epilayers associated with impact ionization when the device is biased in the negative difference resistance insert ignore into journalissuearticles values(NDR); regime insert ignore into journalissuearticles values(F > 3.5 kV cm-1);. Spectral distribution of the emitted light insert ignore into journalissuearticles values(electroluminescence); has been measured to identify the energy distribution of the recombining electron-hole pairs. Electron temperatures, calculated from the high energy tail of the electroluminescence spectra, show that the light emission is due to the recombination of the impact ionized holes with the background, channel, and the travelling space charge electrons. The range of the electron temperatures obtained indicate that the contribution to the light emission from the high field domain electrons increases with reducing sample lengths.
Keywords : Turk J Phys, 23, 1999, , 799 804 Turk J Phys, vol 23, iss 4