Photoconductivity Studies of Crystalline Si:H p-i-n

Authors : Ruhi KAPLAN, Bengü KAPLAN

Pages : 873-884

View : 15 | Download : 4

Publication Date : 0000-00-00

Article Type : Research Paper

Abstract :Optically modulated photoconductivity insert ignore into journalissuearticles values(PC); properties of hydrogenated crystalline silicon insert ignore into journalissuearticles values(c-Si:H); with p-i-n junctions were investigated by frequency-resolved spectroscopy in the temperature range 20-290 K. The PC lifetime measurements of c-Si:H p-i-n show a second lifetime distribution which only dominates at low temperature under low illumination levels of excitation. Unlike the room temperature single lifetime distribution seen in c-Si:H p-i-n, the maximum of this second lifetime distribution shifts to longer times when the excitation intensity decreases, which reconciles with non-geminate pair recombination and thus the distant-pair model. In addition to lifetime measurements, the direct current-voltage insert ignore into journalissuearticles values(I-V); characteristics, the excitation light intensity- and electric field-dependence of the PC were also measured under various conditions. The results are discussed in terms of PC models proposed.
Keywords : Turk J Phys, 22, 1998, , 873 884 Turk J Phys, vol 22, iss 9