Eects of Post Deposition Treatments on Vacuum Evaporated CdTe Thin Films and CdS=CdTe Heterojunction Devices

Authors : Habibe BAYHAN, Çiğdem ERÇELEBİ

Pages : 441-452

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Publication Date : 0000-00-00

Article Type : Research Paper

Abstract :CdTe, CdS thin films and n-CdS/p-CdTe heterostructures have been prepared by conventional vacuum evaporation technique. Some post deposition treatments to optimize the device efficiency have been analyzed and the effects of the individual process steps on the material and device properties were investigated. Annealing in air with and without CdCl2-treatment decreased the CdTe resistivity. The CdCl2-dip followed by annealing in air at 300\circC for 5 min improved the grain size and polycrystalline nature of CdTe thin films. Solar efficiency improvements were achieved when heterojunctions were prepared on successively treated insert ignore into journalissuearticles values(i.e. etched, air annealed, CdCl2-processed); CdTe surfaces. Etching of the CdTe surface with potassium dichromate solution prior to metal contact deposition lead to the formation of low-resistance Au contacts and increase in open circuit voltage and fill factor values.
Keywords : Turk J Phys, 22, 1998, , 441 452 Turk J Phys, vol 22, iss 5