Anomalous Electrical Characteristics of Ion Implanted P+-n Juntions

Authors : Najeeb SIDDIQUI

Pages : 211-218

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Publication Date : 0000-00-00

Article Type : Research Paper

Abstract :Electrical characteristics of three P+ - n diodes fabricated on high resistivity silicon by ion implantation technique are studied by making capacitance-voltage insert ignore into journalissuearticles values(C-V);, reverse current-voltage insert ignore into journalissuearticles values(I-V); and dielectric spectroscopy of semiconductor insert ignore into journalissuearticles values(DSS); measurements. The C-V characteristics show abrupt fall in capacitance, while I-V characteristics show abrupt rise in current at the same voltages as in the C-V characteristics. These abrupt discontinuities are ascribed to the formation of defect clusters in the lightly doped base regions where charge transfer might be taking place by thermally assisted tunneling. Low activation energies obtained in the DSS measurements also point toward the same mechanism.
Keywords : Turk J Phys, 22, 1998, , 211 218 Turk J Phys, vol 22, iss 3