The Influence of the Dispersion of Boron Silicate on the Migration of Non-Equilibrium Charge Carriers Generated by Eect of an Electric Discharge

Authors : A.M. HASANOV

Pages : 237-246

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Publication Date : 0000-00-00

Article Type : Research Paper

Abstract :ESR was used in an investigation of the influence of Boron Silicate dispersion on the accumulation of paramagnetic centers insert ignore into journalissuearticles values(PC);. It was observed that the rate of accumulation of PC increase by increasing of the grain size insert ignore into journalissuearticles values(r);. At r < 0.08 mm the electrons insert ignore into journalissuearticles values(F+-centers); are localized on the surface and with increasing grain size up to 0.08 < r < 0.22 mm charge stratification takes place, the electrons are distributed in near-surface layer and the holes insert ignore into journalissuearticles values(V-centers); are localized in the bulk of the insulator. It was established that the transport of non-equilibrium charge carriers insert ignore into journalissuearticles values(NCC); from the bulk to the surface of Boron Silicate was due to a drift from the depth insert ignore into journalissuearticles values(d \sim 10 m m); to a bulk-charge field generated by an electric discharge. The value of the surface field Es \sim 105 V/cm is determined by experimental results of the data. The kinetics of the isothermal annealing insert ignore into journalissuearticles values(300 K); are used to establish the influence of the surface field on the annihilation of NCC in the ``dead`` layer of separated charges.
Keywords : Turk J Phys, 22, 1998, , 237 246 Turk J Phys, vol 22, iss 3