III-Nitride quantum dots in nanowires: growth, structural, and optical properties

Authors : Bruno DAUDIN

Pages : 314-322

Doi:10.3906/fiz-1405-11

View : 14 | Download : 7

Publication Date : 0000-00-00

Article Type : Research Paper

Abstract :Nanowires insert ignore into journalissuearticles values(NWs); have emerged as a platform to build complex, self-assembled, defect-free nanostructures. In particular, the growth of single islands/disks of various III-nitride combinations insert ignore into journalissuearticles values(InGaN in GaN, GaN in AlN, AlGaN in AlN); are possible in NW heterostructures, extending the field of experimental quantum dot exploration. Specific to NWs, the possibility to disperse them paves the way to probe and investigate only a single wire/dot. In the present article, the growth of GaN disks/islands and InGaN islands as well as their optical properties at the nanometer scale will be reviewed. Besides the intentional growth of QD-in NW heterostructures, special attention will be paid to compositional fluctuations in ternary alloy nanowires, which also lead to a quantum dot-like behavior. Specific to NW geometry, optical emission is expected to exhibit a high degree of polarization along the NW axis, opening a pathway to the practical realization of polarized single photon emitters in a wide range of wavelengths.
Keywords : Quantum dots in nanowires, nitrides, GaN, InGaN, AlGaN, quantum confinement, biexciton binding energy