Fabrication and characterization of Si-PIN photodiodes

Authors : Emre DOĞANCI, Şenol KAYA, Aliekber AKTAĞ, Elif Sarigül DUMAN, Raşit TURAN, Huseyin KARACALİ, Ercan YILMAZ

Pages : 556-562

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Publication Date : 0000-00-00

Article Type : Research Paper

Abstract :In this work, characteristics of silicon-based p$^{+\, }$type, intrinsic insert ignore into journalissuearticles values(I);, n$^{-}$ type insert ignore into journalissuearticles values(Si-PIN); photodiodes with active area of 3.5 $\times $ 3.5 mm$^{2}$, 5.0 $\times $ 5.0 mm$^{2}$, or 7.0 $\times $ 7.0 mm$^{2}$ and their possible usage in optoelectronics were studied. The devices were fabricated in the Radiation Detector Application and Research Center insert ignore into journalissuearticles values(NÜRDAM); of Bolu Abant İzzet Baysal University, Turkey. To acquire the device specifications, the current-voltage insert ignore into journalissuearticles values(I-V); and the capacitance-voltage insert ignore into journalissuearticles values(C-V); measurements were carried out in the photoconductive mode. Quantum efficiency and spectral responsivity measurements were performed in the photovoltaic mode. Both measurements were carried out in a dark environment at room temperature. The measured values of the dark current insert ignore into journalissuearticles values(I$_{dc});$ and the capacitance of photodiodes were -6.97 to -19.10 nA and 23 to 61 pF at -5 V, respectively. The quantum efficiency measurements of the devices increased up to 66%. P responsivity was found to be 0.436 $\pm $ 1 mA/W at 820 nm. The results indicate that the I$_{dc}$ current and the performance of the devices were improved. Therefore, the devices can be utilized for optoelectronics applications and commercial usage.
Keywords : Si PIN photodiodes, dark current, spectral responsivity, quantum efficiency