Electrical characterization and solar light sensitivity of SnS2/n-Si junction

Authors : Ali BALTAKESMEZ

Pages : 214-224

Doi:10.21597/jist.642111

View : 9 | Download : 9

Publication Date : 2020-03-01

Article Type : Research Paper

Abstract :In this study, the SnS2 thin film deposited by spray pyrolysis technique has been analyzed by XRD, SEM and UV-visible characterization techniques to investigate of structural, morphological and optical properties. The thin film has dominant (001) and (002) crystallographic planes, compact grain-like morphology with uniform and good coverage surface and 2.42 eV band gap. The Sn/SnS2/Si/Au-Ge structure has been characterized by electrical measurement. The diode has ideality factor of 1.34 and barrier height of 0.762 eV with reverse-bias current temperature-dependent strongly. In addition, the ITO/SnS2/Si/Au-Ge structure has been characterized by 1.5 AM solar simulator for determine of solar light. The diode under 100 mW/cm2 solar-light source has exhibited 0.24% PCE with Jsc of 1.83 mA/cm2, Voc of 0.46 V and FF of 0.28.
Keywords : Tin sulfide SnSx, Silicon, diode, sputtering, responsivity